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Faculty
 Name :- Dr. Dubey S.K.
Qualification:- Ph. D. (Univ. of Mumbai, 1992)
Designation:- Lecturer
Specialization :- Ion Implantation, Electronic
Materials & Devices
Email :- skdubey@physics.mu.ac.in
M.Sc. 1983, University of Mumbai
Ph.D. 1992, University of Mumbai
Research Interest:
- Ion Implantation,
- Nano Structuring by Swift Heavy ions,
- Dilute Magnetic Semiconductors.
I am an active user of the UGC’s sophisticated heavy-ion accelerator facility, Inter University Accelerator Centre, New Delhi. I have more than hundred Research Publications in reputed National/International Journals/ symposia / Workshop and presented papers at many conferences.
I have successfully completed the seven Research projects from various funding agencies and actively participating in the research projects received by the Department from DST–FIST (Fund for Improvement of Science and Technology) Level I and II program supported by the DST, the Government of India and, UGC -SAP (Special Assistance Programme), New Delhi.
I have been actively involved in bringing various experimental research facilities such as Fourier Transform Infra Red Spectrometer ( JAsco-610) ,Thin film preparation system, X-ray Diffraction, Low Temperature Hall
Measurement set-up, Low temperature PC based I-V and C-V measurement facilities, Four point resistivity measurement Setup (Jandel Engineering Limited-UK),LCR meter (HP-4284A), Ellipsometer(J.A.WOOLLAM CO. INC.)
R.F.Magnetron Sputtering system (Hind High Vac) at the Department of Physics, which are being used extensively by researchers. ? Director of the Inter-University Accelerator Centre (IUAC) New Delhi has nominated me as nominee of IUAC as an Expert member in the selection committees for Research Scholars in the Universities for IUAC.
National Workshops Convener;
(1) Nano-technology and Ion Beams between 21–22 March 2005
(2) Nanostructured materials for energy devices and environment between 17-18 August, 2011.
Research Degree Awarded: Ph.D.: 07, M. Phil.:01; M. Sc (By Research):01.
Research Publications: : Total: 119
(Publications from Last Five Years):
1. Studies of defects and annealing behavior of silicon irradiated with 70 MeV 56 Fe ions; Nuclear Instruments and Methods in Physics Research B 244 (2006) 157-160.
2. Study of optical properties of swift heavy ion irradiated gallium antimonide; Nuclear Instruments and Methods in Physics Research B 244 (2006) 141-144.
3. Synthesis of buried silcon oxynitride layers by ion implantation for Silicon –on insulator (SOI) structures; Nuclear Instruments and Methods in Physics Research B 245(2006) 475-479.
4. Investigations on the effect of argon ion bombardment on the structural and optical properties of crystalline gallium antimonide; Radiation Effects and Defects in Solids, 161 (2006) 433.
5. Investigation of nano size defects in InP induced by Swift iron ions; Nuclear Instruments and Methods in Physics Research B 257 (2007) 287-292.
6. Study of structure and Electrical characteristics of silicon oxynitride layers synthesized by dual ion implantation in silicon and their annealing behavior, ECS Transactions 8(1) (2007) 117-123.
7. FTIR and RBS studies of Ion –Beam synthesized buried silicon oxide layers; Nuclear Instruments and Methods in Physics Research B 266 (2008)1443-1445.
8. Structural characterization of buried nitride layers formed by nitrogen ion implantation; Nuclear Instruments and Methods in Physics Research B 266 (2008)1447-1449.
9. Structural studies of silicon oxynitride layers formed by low energy ion implantation; Nuclear Instruments and Methods in Physics Research B 266 (2008) 1537-1541.
10. Specific Features of Steady –State implantation of Crystalline Silicon with Molecular oxygen – Nitrogen beam: Si L 2,3 X-ray emission spectra; Physics of Solid State, 50 -1(2008) PP 146-151.
11. Study of swift (100 MeV) Fe 9+ ion irradiated gallium antimonide; Nuclear Instruments and Methods in Physics Research B 266 (2008)1443-1445.
12. Investigation of structure and composition of buried oxide layers formed by oxygen ion implantation into silicon; Radiation Effects and Defects in Solids, Vol. No. 164(2009) 49-58
13. Study of SHI induced recrystallization effects in SOI structures synthesized by nitrogen and oxygen ion implantation in silicon; Vacuum 83(2009) 889-8891.
14. Studies of swift iron ions in crystalline silicon; Surface Coating and Technology 203(2009)2422-2426
15. Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon; Surface Coating and Technology 203 (2009) 2651-2653.
16. Study of structure and surface modification of silicon on insulator (SOI) devices synthesized by dual ion implantation; Surface Coating and Technology 203(2009) 2654-2657
17. Effects of the swift iron ions in indium phosphide: Surface Coating and Technology 203 (2009) 2637-2641.
18. Structural and optical studies of GaSb implanted with iron ions; Surface Coating and Technology 203 (2009) 2670-2673.
19. Hi-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation; Vacuum 83 (2009)1164-1168
20. Studies on structure and electrical characteristics of oxide layers synthesized by reactive ion implantation into tantalum; Surface Coating and Technology 203 (2009) 2632-2636.
21. Micro- Raman and UV-VIS studies of 100 MeV Ni 4+ irradiated Cadmium Telluride thin films; J. Nano- Electron. Phys. 3, No.1, 414 (2011).
22. Structural and optical properties of (Ga,Mn)As structure prepared by Ar 2+ ion implantation; American Institute of Physics (AIP) 1313 (2010) 100-103.
23. ZFC and FC studies of gallium nitride implanted with Mn ions; American Institute of Physics (AIP) 1313 (2010) 159-161.
24. Structural, Compositional and Electrical Characterization of buried silicon oxide insulating layers synthesized by SIMOX process; American Institute of Physics (AIP) Proc, CP1249 (2010), pp.206-210.
25 Effects of annealing on the structural and surface properties of buried silicon oxide layers synthesized by SIMOX process”; Radiation Effects and Defects in Solids 166, No. 8-9, (2011) 734.
26.Swift heavy ion induced nanostructures on the surface of GaP,: International Journal of Nanoscience 10, no. 1(2011)105-109.
27. Raman scattering and FTIR studies of 100 MeV Fe9 + ion irradiated gallium phosphide; Radiation Effects and Defects in Solids 166 (2011) 743-748.
28. Magnetic and optical properties of Mn+ implanted gallium nitride and their effects on Si ion irradiation; American Institute of Physics 1349 (2011) 248-251.
29. Formation of (Ga, Mn) N dilute magnetic semiconductor by manganese ion implantation’, International Journal of Engineering and Physical Sciences 6(2012)11.
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