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Science > Department of Physics (Autonomous)

Faculty

Name :- Dr. Dubey S.K.
Qualification:- Ph. D. (Univ. of Mumbai, 1992)
Designation:- Lecturer
Specialization :- Ion Implantation, Electronic Materials & Devices
Email :- skdubey@physics.mu.ac.in

 

M.Sc. 1983, University of Mumbai

Ph.D. 1992, University of Mumbai

Research Interest:
  1. Ion Implantation,                                                                                                        
  2. Nano Structuring by Swift Heavy ions,                                                                           
  3. Dilute Magnetic Semiconductors.


I am  an active user of  the UGC’s sophisticated heavy-ion accelerator facility, Inter  University  Accelerator  Centre,  New  Delhi.  I  have  more  than hundred  Research  Publications  in  reputed  National/International  Journals/ symposia / Workshop and presented papers at many conferences.

I have  successfully  completed  the  seven  Research  projects from various funding  agencies  and actively participating  in  the  research  projects received by the Department from DST–FIST (Fund for Improvement of Science and Technology) Level I and II program supported by the DST, the Government of India and, UGC -SAP (Special Assistance Programme), New Delhi.

I  have  been    actively  involved  in  bringing  various  experimental research facilities such as Fourier Transform Infra Red Spectrometer ( JAsco-610) ,Thin  film  preparation  system,  X-ray  Diffraction,  Low  Temperature  Hall
Measurement set-up,  Low  temperature  PC  based  I-V  and  C-V  measurement facilities,  Four  point  resistivity  measurement  Setup  (Jandel  Engineering Limited-UK),LCR  meter (HP-4284A),  Ellipsometer(J.A.WOOLLAM  CO.  INC.)
R.F.Magnetron  Sputtering  system (Hind  High  Vac) at  the  Department  of Physics, which are being used extensively by researchers. ? Director of  the  Inter-University  Accelerator  Centre  (IUAC)  New  Delhi has nominated me as nominee of IUAC as an Expert member in the selection committees for Research Scholars in the Universities for IUAC. 

National Workshops Convener;
(1) Nano-technology and Ion Beams between 21–22 March 2005
(2) Nanostructured materials for energy devices and environment between 17-18 August, 2011. 

Research Degree Awarded: Ph.D.: 07, M. Phil.:01; M. Sc (By Research):01.
Research  Publications: :  Total:  119 
(Publications from Last Five Years):
1. Studies of defects and annealing behavior of silicon irradiated with 70 MeV 56 Fe ions; Nuclear Instruments and Methods in   Physics Research B  244 (2006)  157-160.
2. Study of optical properties of swift heavy ion irradiated gallium antimonide; Nuclear Instruments and Methods   in   Physics Research B 244 (2006) 141-144.
3. Synthesis of buried silcon oxynitride layers by ion implantation for Silicon –on  insulator  (SOI)  structures;  Nuclear  Instruments  and  Methods  in      Physics Research B  245(2006) 475-479.
4. Investigations on the effect of argon ion bombardment on the structural and optical  properties  of crystalline  gallium  antimonide;  Radiation  Effects  and Defects in Solids, 161 (2006) 433.
5. Investigation of nano size defects in InP induced by Swift iron ions; Nuclear Instruments and Methods in   Physics Research B   257 (2007) 287-292.
6. Study of structure and Electrical characteristics of silicon oxynitride layers synthesized  by  dual ion implantation in silicon and their annealing behavior, ECS Transactions 8(1) (2007) 117-123.
7. FTIR and RBS studies of Ion –Beam synthesized buried silicon oxide layers; Nuclear Instruments  and Methods  in    Physics  Research  B     266 (2008)1443-1445.
8. Structural characterization  of  buried  nitride  layers  formed  by  nitrogen  ion implantation;  Nuclear Instruments and Methods in   Physics Research B  266 (2008)1447-1449.
9. Structural  studies  of  silicon  oxynitride  layers  formed  by  low  energy  ion implantation;  Nuclear Instruments and Methods in   Physics Research B 266 (2008) 1537-1541.
10. Specific Features of Steady –State implantation of Crystalline Silicon with Molecular oxygen – Nitrogen beam: Si L  2,3 X-ray emission spectra; Physics of Solid  State, 50 -1(2008) PP 146-151.
11. Study of  swift (100  MeV) Fe 9+  ion irradiated  gallium  antimonide;  Nuclear Instruments and Methods in   Physics Research B 266 (2008)1443-1445.
12. Investigation of structure and composition of buried oxide layers formed by oxygen  ion  implantation  into  silicon;  Radiation  Effects  and  Defects  in  Solids, Vol. No. 164(2009) 49-58
13. Study of SHI induced recrystallization effects in SOI structures synthesized by  nitrogen  and  oxygen  ion  implantation  in  silicon;  Vacuum  83(2009)  889-8891.
14.  Studies  of  swift  iron  ions  in  crystalline  silicon; Surface  Coating  and Technology 203(2009)2422-2426
15.  Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon; Surface Coating and Technology 203 (2009) 2651-2653.
16. Study  of  structure  and  surface  modification  of  silicon  on  insulator  (SOI) devices synthesized by dual ion implantation; Surface Coating and Technology 203(2009) 2654-2657
17. Effects of  the  swift  iron  ions  in  indium  phosphide: Surface  Coating  and Technology 203 (2009) 2637-2641.
18. Structural  and optical studies of GaSb implanted with iron ions; Surface Coating and Technology 203 (2009) 2670-2673.
19.  Hi-ERDA,  Micro-Raman  and  HRXRD  studies  of  buried  silicon  oxynitride layers synthesized by dual ion implantation; Vacuum 83 (2009)1164-1168
20. Studies  on  structure  and  electrical  characteristics  of  oxide  layers synthesized  by  reactive  ion  implantation  into  tantalum; Surface Coating  and Technology 203 (2009) 2632-2636.
21. Micro- Raman  and  UV-VIS  studies  of  100  MeV  Ni 4+ irradiated  Cadmium Telluride thin films; J. Nano- Electron. Phys. 3, No.1, 414 (2011).
22. Structural and optical properties of (Ga,Mn)As structure prepared by Ar 2+ ion implantation; American Institute of Physics (AIP)   1313 (2010) 100-103.
23. ZFC and FC studies of gallium nitride implanted with Mn ions; American Institute of Physics (AIP)   1313 (2010) 159-161.
24. Structural, Compositional and Electrical Characterization of buried silicon oxide  insulating  layers  synthesized  by  SIMOX  process;  American  Institute  of Physics (AIP) Proc, CP1249 (2010), pp.206-210.
25 Effects  of  annealing  on  the  structural  and  surface  properties  of  buried silicon  oxide  layers  synthesized  by  SIMOX  process”;  Radiation Effects  and Defects in Solids 166, No. 8-9, (2011) 734.
26.Swift heavy  ion  induced  nanostructures  on  the  surface  of  GaP,: International Journal of Nanoscience 10, no. 1(2011)105-109.
27. Raman scattering and FTIR studies of 100 MeV Fe9 + ion irradiated gallium phosphide; Radiation Effects and Defects in Solids 166 (2011) 743-748.
28. Magnetic and optical properties of Mn+ implanted gallium nitride and their effects  on  Si  ion irradiation; American  Institute of  Physics     1349  (2011)  248-251.
29. Formation of (Ga, Mn) N dilute magnetic semiconductor by manganese ion implantation’, International Journal  of  Engineering  and  Physical  Sciences 6(2012)11.

 

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